BSZ035N03MSGATMA1 datasheet

Маркировка

BSZ035N03MSGATMA1
Производитель

Infineon Technologies
Описание

Infineon Technologies BSZ035N03MSGATMA1 Mfr Package Description: GREEN, PLASTIC, TSDSON-8 EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: C BEND Terminal Finish: NOT SPECIFIED Terminal Position: DUAL Number of Terminals: 5 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 18 A DS Breakdown Voltage-Min: 30 V Avalanche Energy Rating (Eas): 150 mJ Drain-source On Resistance-Max: 0.0043 ohm Pulsed Drain Current-Max (IDM): 160 A
Количество страниц

9 шт.
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PDF
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495,12 KB